Accession Number:

ADA193677

Title:

Lattice-Matched HgZnTe Epitaxy Development.

Descriptive Note:

Final rept. Aug 86-Oct 87,

Corporate Author:

MERCURY LPE CO INC PITTSBURGH PA

Personal Author(s):

Report Date:

1988-04-01

Pagination or Media Count:

80.0

Abstract:

The technical feasibility of growing HgZnTe on CdznTe for longwave infrared applications has been demonstrated in this Phase I program. Mercury Company has developed a technique for growing reproducible large area uniform HgZnTe. The proposed research was to focus on longwave infrared LWIR HzZnTe, and Mercury Company routinely achieves cutoff wavelengths of 7.0 to 10.6 microns at room temperature. High quality large area Cd0.8Zn 0.2Te substrates were developed by Galtech Semiconductor Materials Corporation, Utah. High resolution surface and internal IR inspection of substrates was achieved using image analysis and techniques were developed that could lead to automated inspection. In addition, SEM capabilities were developed that could lead to automated inspection of epitaxy material. Keywords Mercury, Cadmium, Tellurium, Zinc, Liquid phase epitaxy, Tellurium melt.

Subject Categories:

  • Crystallography
  • Inorganic Chemistry

Distribution Statement:

APPROVED FOR PUBLIC RELEASE