Accession Number:

ADA193497

Title:

Low Temperature Film Growth of the Oxides of Zinc, Aluminum, and Vanadium (and Related Systems, Oxides of Gold and Germanium, Nitrides of Aluminum and Tungsten) by Reactive Sputter Deposition.

Descriptive Note:

Final rept. 1 Jul 84-31 Dec 87,

Corporate Author:

WISCONSIN UNIV MILWAUKEE LAB OF SURFACE STUDIES

Personal Author(s):

Report Date:

1988-02-01

Pagination or Media Count:

140.0

Abstract:

The research involved investigation of process parameter growth environment film property relationships for various binary oxide and nitride films grown on unheated substrates by reactive sputter deposition using an elemental target. In situ optical emission spectroscopy and glow discharge mass spectrometry were used to determine gas phase species in the plasma volume. A battery of techniques were used to characterize post-deposition film crystallography, chemistry, microstructure, electrical resistivity, and optical behavior. Keywords Sputter deposition, Glow discharges, Glow discharge diagnostics, Optical emission, Mass spectrometry, Aluminum oxide, Vanadium, Pentoxide, Gold oxide, Tungsten nitride, Aluminum nitride, Germanium dioxide.

Subject Categories:

  • Physical Chemistry
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE