Accession Number:

ADA193438

Title:

Electrooptical Devices.

Descriptive Note:

Annual rept. 1 Oct 1983-30 Sep 1984

Corporate Author:

MASSACHUSETTS INST OF TECH LEXINGTON LINCOLN LAB

Personal Author(s):

Report Date:

1984-09-30

Pagination or Media Count:

68.0

Abstract:

GaInAsPInP buried-heterostructure lasers formed by thermally transported InP have resulted in low threshold, high efficiency, and high device yield. Zinc diffusion has been utilized to improve the light-current linearity and reduce the threshold temperature dependence. A technique has been developed to calculate the voltage and current distributions in the mass-transported GaInAsPInP buried-heterostructure lasers. It is valuable for designing lasers for operation without current leakage through the InP pn homojunctions formed in the transported regions. Mass-transported GaInAsPInP buried-heterostructure lasers with low threshold currents and a linear light output to greater than 13 mW per facet have been obtained. This is achieved by using sufficient p-doping in the cap layer of the starting double-heterostructure wafer. Buried- heterostructure, actively Q-switched diode lasers have been made with threshold currents as low as 14 mA. The lasers operate continuously at room temperature. Full onoff modulation has been observed at measurement-limited rates of about 12.6 GHz while modulation has been seen at rates of 13.5 GHz. The InP mass- transport technique has been used to improve chemically etched mirrors for GaInAsPInP buried-heterostructure lasers. Devices with one such mirror and a second cleaved mirror show high device yield, thresholds currents as low as 5 MA, and differential quantum efficiency as high as 33 percent. Keywords Electrooptical devices, Buried heterostructure, Double heterostructure, Etched mirror laser, Diode lasers, GaInAsPInP lasers.

Descriptors:

Subject Categories:

  • Lasers and Masers

Distribution Statement:

APPROVED FOR PUBLIC RELEASE


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