Accession Number:

ADA193359

Title:

Silicon-on-Insulator Pin Diodes.

Descriptive Note:

Final technical rept. Mar 86-Jul 87,

Corporate Author:

RENSSELAER POLYTECHNIC INST TROY NY DEPT OF ELECTRICAL COMPUTER AND SYSTEMS E NGINEERING

Report Date:

1987-12-01

Pagination or Media Count:

107.0

Abstract:

Microwave monolithic integrated circuit MMMIC technology using recrystallized silicon-on-insulator substrates would permit PIN diode phase shifters to be fabricated with higher power-handling capability and lower insertion loss than conventional MMIC control circuits using GaAs MESFETs. Moreover, at frequencies below 10 GHz, where substrate area requirements can be extensive, the silicon-on-insulator substrate technology can be less expensive. The research program stresses recrystallization of silicon-on-alumina films, followed by growth of silicon epitaxial layers and fabrication of surface-oriented PIN diodes. In the second year of the program, we have accomplished the following 1 Recrystallization of silicon-on-alumina with various encapsulation and stress-relief layers, using both an electron-beam system and a graphite strip heater 2 Evaluation of the effect of stress on film quality, which indicates directions for improved device-quality films 3 Design and initial fabrication of surface-oriented PIN diodes on single crystal silicon to demonstrate device design concept 4 Evaluation of future directions for the research program. This report covers the second-year results. Particularly noteworthy is the first recrystallization of silicon-on-alumina films and the first fabrication of surface-oriented PIN diodes with doped polysilicon handles for P and N injecting contacts.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE