Silicon-on-Insulator Pin Diodes.
Final technical rept. Mar 86-Jul 87,
RENSSELAER POLYTECHNIC INST TROY NY DEPT OF ELECTRICAL COMPUTER AND SYSTEMS E NGINEERING
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Microwave monolithic integrated circuit MMMIC technology using recrystallized silicon-on-insulator substrates would permit PIN diode phase shifters to be fabricated with higher power-handling capability and lower insertion loss than conventional MMIC control circuits using GaAs MESFETs. Moreover, at frequencies below 10 GHz, where substrate area requirements can be extensive, the silicon-on-insulator substrate technology can be less expensive. The research program stresses recrystallization of silicon-on-alumina films, followed by growth of silicon epitaxial layers and fabrication of surface-oriented PIN diodes. In the second year of the program, we have accomplished the following 1 Recrystallization of silicon-on-alumina with various encapsulation and stress-relief layers, using both an electron-beam system and a graphite strip heater 2 Evaluation of the effect of stress on film quality, which indicates directions for improved device-quality films 3 Design and initial fabrication of surface-oriented PIN diodes on single crystal silicon to demonstrate device design concept 4 Evaluation of future directions for the research program. This report covers the second-year results. Particularly noteworthy is the first recrystallization of silicon-on-alumina films and the first fabrication of surface-oriented PIN diodes with doped polysilicon handles for P and N injecting contacts.
- Electrical and Electronic Equipment