DID YOU KNOW? DTIC has over 3.5 million final reports on DoD funded research, development, test, and evaluation activities available to our registered users. Click
HERE to register or log in.
Accession Number:
ADA193359
Title:
Silicon-on-Insulator Pin Diodes.
Descriptive Note:
Final technical rept. Mar 86-Jul 87,
Corporate Author:
RENSSELAER POLYTECHNIC INST TROY NY DEPT OF ELECTRICAL COMPUTER AND SYSTEMS E NGINEERING
Report Date:
1987-12-01
Pagination or Media Count:
107.0
Abstract:
Microwave monolithic integrated circuit MMMIC technology using recrystallized silicon-on-insulator substrates would permit PIN diode phase shifters to be fabricated with higher power-handling capability and lower insertion loss than conventional MMIC control circuits using GaAs MESFETs. Moreover, at frequencies below 10 GHz, where substrate area requirements can be extensive, the silicon-on-insulator substrate technology can be less expensive. The research program stresses recrystallization of silicon-on-alumina films, followed by growth of silicon epitaxial layers and fabrication of surface-oriented PIN diodes. In the second year of the program, we have accomplished the following 1 Recrystallization of silicon-on-alumina with various encapsulation and stress-relief layers, using both an electron-beam system and a graphite strip heater 2 Evaluation of the effect of stress on film quality, which indicates directions for improved device-quality films 3 Design and initial fabrication of surface-oriented PIN diodes on single crystal silicon to demonstrate device design concept 4 Evaluation of future directions for the research program. This report covers the second-year results. Particularly noteworthy is the first recrystallization of silicon-on-alumina films and the first fabrication of surface-oriented PIN diodes with doped polysilicon handles for P and N injecting contacts.
Distribution Statement:
APPROVED FOR PUBLIC RELEASE
