Accession Number:

ADA193333

Title:

Metalorganic Chemical Vapor Deposition and Its Application to the Growth of the Heterostructure Hot Electron Diode.

Descriptive Note:

Technical rept.,

Corporate Author:

ILLINOIS UNIV AT URBANA COORDINATED SCIENCE LAB

Personal Author(s):

• Emanuel, Mark A.

Report Date:

1988-03-01

Pagination or Media Count:

124.0

Abstract:

Metalorganic chemical vapor deposition MOCVD is an epitaxial crystal growth technique capable of producing high-quality compound semiconductors in thick or thin layers with abrupt junctions, excellent areal uniformity, and precisely controlled thickness, doping and composition. In this work the desired characteristics of an MOCVD system are described, and design criteria necessary for their implementation are identified. Special emphasis is placed on defensive design strategies intended to limit the extent of system perturbation due to various component failure modes and normal maintenance procedures. The design of reactor computer control software is also considered, and algorithms for the growth of layers graded in both doping and composition are presented.

Descriptors:

• *EPITAXIAL GROWTH
• *VAPOR DEPOSITION
• *SEMICONDUCTOR DIODES
• ALGORITHMS
• COMPUTER PROGRAMS
• CONTROL
• CRYSTAL GROWTH
• DEFENSE SYSTEMS
• DOPING
• FAILURE
• LAYERS
• MAINTENANCE
• METHODOLOGY
• ORGANOMETALLIC COMPOUNDS
• PERTURBATIONS
• REACTOR CONTROL
• STRATEGY
• THICKNESS
• THINNESS
• HETEROJUNCTIONS
• GALLIUM ARSENIDES
• ALUMINUM GALLIUM ARSENIDES

Subject Categories:

• Solid State Physics
• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE