Accession Number:

ADA193098

Title:

Focused Ion Beam Fabrication of Graded Channel Fet's in GaAs and Si.

Descriptive Note:

Semi-Annual rept. 1 Jul-31 Dec 87,

Corporate Author:

MASSACHUSETTS INST OF TECH CAMBRIDGE RESEARCH LAB OF ELECTRONICS

Personal Author(s):

Report Date:

1988-02-03

Pagination or Media Count:

8.0

Abstract:

The goal of this research is to exploit the novel capability of the focused ion beam to implant dopants whose density is a function of the lateral position. Thus, Field Effect Transistors in Gallium Arsenide and Silicon can be fabricated with a gradient of doping from source to drain. We have fabricated and tested such graded FETs in GaAs and have fabricated Si devices up to the point of focused ion beam implantation. In addition, programs for modeling the devices on the computer have been written. Recently, we have conceived and fabricated a new device a tunable Gunn oscillator which makes use of doping gradients. To carry out these implantations, we have further developed the performance of our focused ion beam machine.

Subject Categories:

  • Inorganic Chemistry

Distribution Statement:

APPROVED FOR PUBLIC RELEASE