Blue-Green Laser Diode Research Program.
Final technical progress rept. 1 Oct 85-31 Dec 87,
MINNESOTA MINING AND MFG CO ST PAUL ELECTRONIC AND INFORMATION SECTOR LAB
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This report presents the results of work during the final quarter of ONR Contract No. N00014-85-C-0552 July 1, 1987 to September 30, 1987 and during a three-month extension of the original twenty-four month program October 1, 1987 to December 31, 1987. This report concludes with a Summary Report describing the highlights and major accomplishments under this contract during the period October 1, 1985 to December 31, 1987 in the following areas i. Growth of unintentionally-doped ZnSe epitaxial films by MBE on 100 GaAs substrates in order to fully characterize the material and to understand the effects of varying growth conditions on the resultant film properties ii. Growth of unintentionally-doped ZnSe on alternate substrates Ge, Si, Ge with Ge buffer layer, Si with GeZnSe strained-layer superlattice buffer layer in an attempt to reduce the deleterious effects caused by lattice mismatch between the substrate and the epilayer andor possible autodoping by contaminants from the substrate which had been suspected to occur when using GaAs substrates iii. p-doping of ZnSe films on 100 GaAs substrates iv. Examination of the lasing properties of ZnSe films using electron-beam pumping and v. Studies of metal contacts on ZnSe for Ohmic contacts and Schottky barriers.
- Lasers and Masers