Accession Number:

ADA191902

Title:

Fabrication of Polysilicon Gate FET in Laser Melted Silicon on Silicon Dioxide on PLZT,

Descriptive Note:

Corporate Author:

NAVAL OCEAN SYSTEMS CENTER SAN DIEGO CA

Personal Author(s):

• Burgener, M. L.
• Lin, T. H.

Report Date:

1987-03-01

Pagination or Media Count:

2.0

Abstract:

N-channel Polysilicon gate FETs have been fabricated in a laser-melted silicon-on-SiO2-on PLZT structure. Channel mobilities in the devices are 50 sq. cmVs with threshold and source-to-drain breakdown voltages as expected from the dielectric thickness and channel doping used. PLZT wafers subjected to the same processing temperatures still show an excellent electro-optic effect. Keywords Polysilicon gate, Field effect transistors, Ferroelectric materials.

Descriptors:

• *FERROELECTRIC MATERIALS
• *GATES(CIRCUITS)
• *N TYPE SEMICONDUCTORS
• *POLYSILICONS
• CHANNELS
• DIELECTRICS
• DOPING
• ELECTROOPTICS
• FIELD EFFECT TRANSISTORS
• LASERS
• MOBILITY
• PROCESSING
• SILICON DIOXIDE
• TEMPERATURE
• THICKNESS

Subject Categories:

• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE