Fabrication of Polysilicon Gate FET in Laser Melted Silicon on Silicon Dioxide on PLZT,
NAVAL OCEAN SYSTEMS CENTER SAN DIEGO CA
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N-channel Polysilicon gate FETs have been fabricated in a laser-melted silicon-on-SiO2-on PLZT structure. Channel mobilities in the devices are 50 sq. cmVs with threshold and source-to-drain breakdown voltages as expected from the dielectric thickness and channel doping used. PLZT wafers subjected to the same processing temperatures still show an excellent electro-optic effect. Keywords Polysilicon gate, Field effect transistors, Ferroelectric materials.
- Electrical and Electronic Equipment