Accession Number:

ADA191887

Title:

Infrared Devices Using Semiconductor Quantum Wells.

Descriptive Note:

Memorandum rept.,

Corporate Author:

ROYAL SIGNALS AND RADAR ESTABLISHMENT MALVERN (ENGLAND)

Personal Author(s):

• Kane, M. J.
• Apsley, N.

Report Date:

1987-10-01

Pagination or Media Count:

32.0

Abstract:

We describe in this memo the results of a preliminary calculation which shows how the intersubband optical transition in III-V quantum wells may be used as the basis for research into a family of infrared devices. In particular, we show that resonating the transition with a surface plasmon or with a guided mode in a semiconductor-quantum well- metal structure can enhance its optical effects by roughly a factor of 50. This allows only 4x10 to the 12th power carriers per sq. cm to effect total absorption of the incoming radiation. Such a density can be controlled electrostatically and so the transition may be switched by applying a bias to the Shottky metal thus we have an efficient electronic modulator for the 10 micron band. Intersubband absorption should, in addition, show significant photoconductivity and so the device might prove a reasonable infrared detector. Finally, an important consideration of this device is that it is built epitaxially using wide band gap semiconductors. The possibilities, therefore, of substantial monolithic integration are considerable and we allow ourselves some speculation on the types of device which may be possible.

Descriptors:

• *INFRARED DETECTORS
• *SEMICONDUCTOR DEVICES
• EFFICIENCY
• ELECTRONICS
• GROUP III COMPOUNDS
• GROUP V COMPOUNDS
• INFRARED EQUIPMENT
• METALS
• MODULATORS
• OPTICAL PROPERTIES
• PHOTOCONDUCTIVITY
• PLASMONS
• QUANTUM ELECTRONICS
• SEMICONDUCTORS
• SURFACES
• TRANSITIONS
• UNITED KINGDOM
• INFRARED OPTICAL MATERIALS
• RADIATION ABSORPTION

Subject Categories:

• Electrical and Electronic Equipment
• Infrared Detection and Detectors

Distribution Statement:

APPROVED FOR PUBLIC RELEASE