Studies of Metal-Silicon, Silicon-Metal, and Silicide Based Interfaces: Synchrotron Radiation Photoemission and Inverse Photoemission Investigations of Interface Formation and Compound Nucleation.
Final rept. 1 Oct 84-23 Oct 87,
MINNESOTA UNIV MINNEAPOLIS DEPT OF CHEMICAL ENGINEERING AND MATERIALS SCIENCE
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This report summarizes a three-year investigation of metalsemiconductor interface formation. Highlights for the 21 refereed papers are included, together with copies of feature articles published in Physics Today and The American Scientist which cite support from ARO. Keywords MetalSemiconductor Interfaces Synchrotron radiation photoemission Inverse photoemission Compound nucleation.
- Inorganic Chemistry