Defects in High-Mobility Semiconductor Systems.
Interim rept. no. 1,
LUND UNIV (SWEDEN) DEPT OF SOLID STATE PHYSICS
Pagination or Media Count:
Initial work under subject contract was devoted to a assembling and calibrating essential electrical, optical, and spectroscopic measurement facilities needed for analysis of defects in high-mobility structures b application of such measurement systems to study of basic defects in previously characterized materials, in order to validate techniques and also to verify and extend our understanding of the physics of such basic defects and c initiation of fabrication of critical test samples comprising heterostructures and superlattices of GaAs and Si and Ge.
- Solid State Physics