Accession Number:

ADA191558

Title:

Optical Nonlinearities in GaAs/GaAlAs Multiple Quantum Wells Fabricated by Metalorganic Chemical Vapor Deposition for Use in Optical Signal Processing.

Descriptive Note:

Final rept. 8 Jan 85-6 Jan 87,

Corporate Author:

UNIVERSITY OF SOUTHERN CALIFORNIA LOS ANGELES DEPT OF ELECTRICAL ENGINEERING

Personal Author(s):

• Gamire, E.
• Dapkus, P. D.

Report Date:

1987-12-01

Pagination or Media Count:

75.0

Abstract:

Preparation of high quality GaAsGaA1As Multiple quantum wells MQW grown by Metalorganic Chemical Vapor Deposition on GaAs substrates and measurement of nonlinear saturation has been completed in this 18 month contract. The results show materials which rivals the highest quality MQWs grown by any technique. Preparation of GaAsGaA1As MQWs on GaP substrates and measurement of nonlinear saturation has been completed. It was shown that this material has high cw saturation intensity and, if used in a nonlinear Fabry-Perot, would be useful only in pulsed experiments. The material looks ideal for hybrid devices.

Descriptors:

• *ORGANOMETALLIC COMPOUNDS
• *QUANTUM ELECTRONICS
• *HETEROJUNCTIONS
• CHEMICAL REACTIONS
• FABRY PEROT INTERFEROMETERS
• GALLIUM ARSENIDES
• HYBRID SYSTEMS
• MEASUREMENT
• NONLINEAR SYSTEMS
• OPTICAL PROCESSING
• PULSES
• QUALITY
• SATURATION
• SIGNAL PROCESSING
• SUBSTRATES
• VAPOR DEPOSITION
• ALUMINUM GALLIUM ARSENIDES
• GALLIUM PHOSPHIDES

Subject Categories:

• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE