Dielectric Spectroscopy of Semiconductors.
Progress rept. no. 1,
ROYAL HOLLOWAY AND BEDFORD NEW COLL EGHAM (UNITED KINGDOM)
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Dielectric studies are reported on two Schottky barriers on n-type silicon of 10 and 3,000 ohm cm room temperature resistivity, and also on an p-n junction on 1,000 ohm cm p-type silicon. The response of all three in the frequency range 0.01 - 10,000 Hz shows the presence of a loss peak which is slightly broader than Debye, and also a dc process, with further complicating features in the case of the Schottky barrier on high-resistivity silicon. These include the appearance of a low-frequency dispersion or a negative capacitance which are strongly dependent on relatively small forware or reverse bias. Several of these features r3esemble the behaviour of previously investigated GaAs Schottky diodes and the important conclusion is reached that these effects are not simply the consequences of the compound nature of the semiconductor in question but are the results of electrochemical processes at the semiconductor - metal interfaces.
- Physical Chemistry