Micro-Raman Analysis of Dielectric Optical Thin Films.
Final technical rept. 1 May 85-30 Sep 87,
ROCHESTER UNIV N Y LAB FOR LASER ENERGETICS
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Wide-band-gap dielectric thin films up to 6 micrometer in thickness are characterized by spontaneous and stimulated Raman-gain microscopy. Materials surveyed are Aluminum oxide, Yttrium oxide, Zirconium oxide, Hafnium oxide, and Tantalum oxide. 1-micrometer sized surface defects on Y2O3 are investigated.
- Inorganic Chemistry