Microscopic Control of Semiconductor Interface Reactivity.
Interim rept. 1 Aug 86-30 Sep 87,
MINNESOTA UNIV ST PAUL
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Executive Summary - The goal of our program is to control semiconductor surface and interface behavior by means of local modifications of the surfaceinterface chemical environment. Major thrust areas include the use of ultrathin catalyst layer to promote low temperature oxidation and nitridization of semiconductor surfaces, the search for passivating layers to reduce metallization corrosion, and the exploitation of diffusion barrier effects to control interdiffusion at metal-semiconductor junctions. Such studies have potential implications for low temperature synthesis of gate and field oxides, and for enhancing metallization stability against corrosion and electromigration.
- Solid State Physics
- Electrical and Electronic Equipment