Accession Number:

ADA191118

Title:

Microwave Semiconductor Research-Materials, Devices and Circuits.

Descriptive Note:

Final rept. 1 May 84-30 Apr 87,

Corporate Author:

CORNELL UNIV ITHACA NY SCHOOL OF ELECTRICAL ENGINEERING

Personal Author(s):

• Eastman, L. F.
• Shealy, J. R.
• Woodard, D. W.
• Mukherjee, S.
• Wicks, G. W.

Report Date:

1987-10-01

Pagination or Media Count:

52.0

Abstract:

This program covers the growth and assessment of gallium arsenide and related compounds and alloys for use in microwave, millimeter wave, and optical devices. It also covers the processing of the material into devices, the testing of the devices, and the theoretical modeling of carrier transport in these devices. Both molecular beam epitaxy MBE and organometallic vapor phase epitaxy OMVPE are used for growth.

Descriptors:

• *CHARGE CARRIERS
• *EPITAXIAL GROWTH
• *GALLIUM ARSENIDES
• *MOLECULAR BEAMS
• ALLOYS
• MATERIALS
• MILLIMETER WAVES
• MODELS
• OPTICAL EQUIPMENT
• ORGANOMETALLIC COMPOUNDS
• PROCESSING
• THEORY
• TRANSPORT PROPERTIES
• VAPOR PHASES

Subject Categories:

• Solid State Physics
• Crystallography
• Particle Accelerators

Distribution Statement:

APPROVED FOR PUBLIC RELEASE