Study for the Determination of General and Specific Properties of Wide Energy-Band Gap HgCdTe in the 1 to 2 Micrometer Wavelength Range.
Interim rept. no. 2, Oct-Dec 87,
SOCIETE ANONYME DE TELECOMMUNICATIONS PARIS (FRANCE)
Pagination or Media Count:
The second phase of this contract was dedicated to the optimization of the technical fabrication parameters of HgCdTe avalanche photodiodes in the 1.3 micron to 1.55 micron wavelength region. In addition, the electroluminescent properties and the technical feasibility of HgCdTe emitters were investigated. The fabrication technology implemented for the deliverable avalanche photodiodes under this contract is planar.
- Electrical and Electronic Equipment
- Solid State Physics