NRL 1.3 Micron High Power Single Element Laser Diode.
Monthly rept. no. 9.
TRW SPACE AND TECHNOLOGY GROUP REDONDO BEACH CA APPLIED TECHNOLOGY DIV
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As discussed in last months technical report Monthly Report No. 8, September 1987, an examination of the characteristics of devices which we have made indicate several problems. Slope efficiencies nd are low, averaging between 0.20 and 0.30 mWmA range. Also, the far-field characteristics of most devices show multiple-lobed structures, indicative of interference of radiation from several sources. There are some devices with stable, smooth far-field patterns, but they are a minority. To analyze this problem, devices with no facet coatings had their far-field characteristics measured and then underwent SEM analysis of the devices cross-section as viewed from the front-facet. The SEM micrographs were attached to the far-field plots and a comparison was made across several devices. The SEM micrographs reveal extraneous and irregular crystal growth of the epitaxial layer which forms the active region along the walls of the V-channel. SEM micrographs of every device which showed this anomalous crystal growth on the walls of the V-channel correspond to far-field patterns which are characterized by multiple lobes.
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