Accession Number:

ADA190268

Title:

High-Efficiency Thin-Film Silicon-on-GaP Solar Cell for Improved Radiation Resistance.

Descriptive Note:

Final rept. Jul 86-Feb 87,

Corporate Author:

ASTROSYSTEMS INC NEWARK DE ASTRO POWER DIV

Personal Author(s):

Report Date:

1987-09-01

Pagination or Media Count:

28.0

Abstract:

The ultimate high efficiency silicon solar cell is a light trapping thin film silicon structure epitaxially grown on an oxide overcoated substrate such as silicon or gallium phosphide GaP. In addition to high performance, this thin-base silicon device is more tolerant of radiation effects than a thick-base solar cell because this structure is less sensitive to reductions in minority-carrier diffusion length. The oxide overcoating layer, an integral part of this design, will serve as a dielectric back surface reflector leading to light trapping, and it will also eliminate dangling bonds in the overgrown silicon layer, effectively passivating the silicon-oxide interface and reducing back surface recombination. Keywords Silicon, Thin film, Heteroepitaxial, Radiation, Gallium phosphide.

Subject Categories:

  • Electric Power Production and Distribution
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE