Accession Number:
ADA190268
Title:
High-Efficiency Thin-Film Silicon-on-GaP Solar Cell for Improved Radiation Resistance.
Descriptive Note:
Final rept. Jul 86-Feb 87,
Corporate Author:
ASTROSYSTEMS INC NEWARK DE ASTRO POWER DIV
Personal Author(s):
Report Date:
1987-09-01
Pagination or Media Count:
28.0
Abstract:
The ultimate high efficiency silicon solar cell is a light trapping thin film silicon structure epitaxially grown on an oxide overcoated substrate such as silicon or gallium phosphide GaP. In addition to high performance, this thin-base silicon device is more tolerant of radiation effects than a thick-base solar cell because this structure is less sensitive to reductions in minority-carrier diffusion length. The oxide overcoating layer, an integral part of this design, will serve as a dielectric back surface reflector leading to light trapping, and it will also eliminate dangling bonds in the overgrown silicon layer, effectively passivating the silicon-oxide interface and reducing back surface recombination. Keywords Silicon, Thin film, Heteroepitaxial, Radiation, Gallium phosphide.
Descriptors:
Subject Categories:
- Electric Power Production and Distribution
- Solid State Physics