Accession Number:

ADA190129

Title:

Fundamental Properties and Devices Applications of Ge(x)Si(1-x)/Si Superlattices.

Descriptive Note:

Technical rept. 1 Aug 85-31 Jul 87,

Corporate Author:

CALIFORNIA UNIV LOS ANGELES

Personal Author(s):

Report Date:

1987-01-01

Pagination or Media Count:

49.0

Abstract:

The progress include a growth and characterization of GexSi1-xSi epitaxial films and superlattices, b study of power loss by two dimensional holes in coherently strained GexSi1-xSi heterostructures, c theoretical prediction of resonances of intraband absorption d study of B203 as a low temperature p-type dopant. Initial stage of growth of GexSi1-xSi films were studied using reflection high energy electron diffraction RHEED and the superlattice structures were characterized using TEM. In the study of magnetotransport of holes in GexSi1-xSi SLSs, we found that the power loss data can be well understood by taking into account the effects from the acoustic mode phonons by both the deformation potential and the piezoelectric coupling. The resonance nature of intraband absorption can be used for sensitive and tunable IR detector applications. The possibility of using B203 as an effective p-type doping source is demonstrated for providing abrupt doping profiles needed for GExSi1-xSi superlattices.

Subject Categories:

  • Solid State Physics
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE