Accession Number:

ADA189673

Title:

Gallium Arsenide and Related Compounds, 1986.

Descriptive Note:

Final rept. 1 Aug 86-30 Jul 87,

Corporate Author:

ILLINOIS UNIV CHAMPAIGN

Personal Author(s):

• Lindley, W. T.

Report Date:

1986-01-01

Pagination or Media Count:

520.0

Abstract:

The 13th International Symposium on Gallium Arsenide and Related Compounds was held in Las Vegas, Nevada from September 28 through Oct 1, 1986. There were 360 participants from 15 countries. There were 180 regular papers and 16 late news papers submitted from which the Technical Program Committee selected 91 regular papers and 8 late news papers to be presented at the conference. The significant recent growth and development of the field is well illustrated by the scope of the papers printed included are bulk growth, epitaxial growth, characterization, processing, quantum wells, optoelectronic devices and high-speed devices.

Descriptors:

• *ELECTROOPTICS
• *GALLIUM ARSENIDES
• *CRYSTAL GROWTH
• *ELECTRONIC EQUIPMENT
• EPITAXIAL GROWTH
• NEVADA
• QUANTUM ELECTRONICS
• DOPING
• ION IMPLANTATION
• VAPOR DEPOSITION
• SEMICONDUCTORS
• FIELD EFFECT TRANSISTORS
• SYMPOSIA

Subject Categories:

• Crystallography
• Solid State Physics
• Electrooptical and Optoelectronic Devices
• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE