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Accession Number:
ADA188760
Title:
Modeling and Transport in Semiconductor Devices.
Descriptive Note:
Final rept. 1 Sep 84-31 Aug 87,
Corporate Author:
ARIZONA STATE UNIV TEMPE
Report Date:
1987-11-01
Pagination or Media Count:
88.0
Abstract:
Time resolved, subpisecond laser pulse techniques were used to experimentally study the ultrafast relaxation process in the far-from equilibrium electron-hole plasma in Gallium Arsenide. Several theoretical studies have been carried out to explain these experimental measurements. The novel ensemble Monte Carlo simulation technique was used to investigate the cooling process of the hot laser-excited carriers, considering the roles of the carrier-phonon interaction, electron-hole interaction, and the hot phonon effects. The effects of different excitation energies and excitation levels were examined without applying external electric fields. Screening effects were investigated separately and electron-electron and hole-hole interactions were ignored in the calculations to emphasize the electron-hole interaction and hot phonon effects. Degeneracy was taken into account while the excitation level was greater than 1 x 10 to the 17th power cc. The study showed that the hot phonon effects do slow down the cooling rates as expected and the electron-hole interaction slows the cooling rate at low excitation levels while enhancing it at high excitation levels. Keywords Laser excitation, Semiconductors Hot electrons.
Distribution Statement:
APPROVED FOR PUBLIC RELEASE
