Accession Number:

ADA188711

Title:

Properties of Reactively Sputtered WNx Films,

Descriptive Note:

Corporate Author:

CALIFORNIA INST OF TECH PASADENA

Personal Author(s):

• Kolawa, E.
• So, F. C.
• Zhao, X.-A.
• Nicolet, M-A.

Report Date:

1987-01-01

Pagination or Media Count:

8.0

Abstract:

Tungsten nitride WNX films were prepared by reactive rf sputtering of a tungsten target in N2Ar plasma. The resistivity, intrinsic stress and atomic composition of the films were studied as functions of various sputtering parameters sputtering power, gas pressure, gas composition and substrate bias. The atomic percentage of nitrogen x of the WNX films was found to decrease with sputtering power and to increase with the partial pressure of nitrogen. The intrinsic stress if WNX is compressive. The dependence of film properties upon sputtering parameters for WNX differs significantly from that of reactively sputtered TiN films, and may be attributed to the difference in the formation mechanisms of TiN and WNX.

Descriptors:

• *FILMS
• *NITRIDES
• *TIN
• *TUNGSTEN
• ATOMIC STRUCTURE
• BIAS
• GASES
• METAL FILMS
• NITROGEN
• PARTIAL PRESSURE
• POWER
• PRESSURE
• RADIOFREQUENCY
• REACTIVITIES
• RESISTANCE
• SPUTTERING
• SUBSTRATES
• TARGETS
• REPRINTS

Subject Categories:

• Inorganic Chemistry

Distribution Statement:

APPROVED FOR PUBLIC RELEASE