Fundamental Studies in the OM-CVD Growth of Ga-In-As-Sb.
Final rept. 1 Sep 83-28 Feb 87,
NORTH CAROLINA STATE UNIV AT RALEIGH DEPT OF ELECTRICAL AND COMPUTER ENGINEERI NG
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We have studied the fundamental OM-CVD growth processes. Several ternary and quaternary alloys have been synthesized and their structural, optical and electrical properties were studied. We have developed Atomic Layer Epitaxy to control the deposition process to the atomic level. Strained layer superlattices have been used as buffer layers to reduce defects originating from GaAs substrates.
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