Accession Number:

ADA184672

Title:

Dramatically Improved Radiation Hardness for CMOS Silicon Gate Integrated Circuits Even Down to Cryogenic Temperatures.

Descriptive Note:

Final rept.,

Corporate Author:

MICREL INC SUNNYVALE CA

Personal Author(s):

Report Date:

1987-06-29

Pagination or Media Count:

3.0

Abstract:

This program focuses on Field-Hardness specifically, the parasitic N-channel leakages which can result on the edge of an N-Channel transistor from source to drain, from drain of one device to the drain of another or from drain across the CMOS P-well to the N-substrate Vdd. This type of leakage normally causes device failure well before the more publicized gage-oxide problem cause Vt to drift out of spec. By butting a poly field-plate directly next to the device in the width direction for example we dramatically minimize the positive charge which can build up during irradiation since there is a minimal amount of oxide under this field plate this technique is used to extend previously used concepts of using buried P guard-rings and special gatefield overlap layout to improve the Radiation Hardness of Integrated Circuits and has the added bonus of obviously not being sensitive to Carrier Freeze-out phenomena which degrades P guard-ring usefulness at a cryogenic temperatures.

Subject Categories:

  • Guns

Distribution Statement:

APPROVED FOR PUBLIC RELEASE