Excimer Laser-Assisted Deposition of GaAs, AlAs, and (Al,Ga)as from Lewis Acid-Base Adducts.
Interim technical rept. no. 1, Oct 86-Aug 87,
HUGHES RESEARCH LABS MALIBU CALIF CHEMICAL PHYSICS DEPT
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Laser-assisted deposition of GaAs, AL,As and AL,GaAs thin films on Ge100 substrates from trimethylgallium-trimethylarsenic and trimethylaluminum-trimethylarsenic Lewis acid-base adduct source materials is reported. A parametric study has been performed in which reactive gas pressure, substrate temperature, laser fluence, laser wavelength 248 nm or 193 nm, and orientation of the laser beam with respect to the substrate have been varied. In the case of irradiation parallel to the substrate, stoichiometric films of GaAs and AL,GaAs have been obtained. The data suggest that for irradiation perpendicular to the substrate a competition exists between desorption and photodeposition, which adversely affects film stoichiometry under the conditions studied.
- Solid State Physics