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Laser Induced Chemical Vapor Deposition of Gallium Arsenide Films.
Annual rept. no. 1, Aug 86-Jul 87,
SOUTHERN METHODIST UNIV DALLAS TEX DEPT OF ELECTRICAL ENGINEERING
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The objective of this project is to investigate the epitaxial growth of device quality III-V semiconductor films by the free electron laser-induced epitaxial growth technique at low temperatures. Major efforts have been directed to 1 the design and construction of a low pressure reaction chamber and control system, and 2 the laser induced deposition and characterization of epitaxial gallium aresenide films by computer controlled MOCVD. Gallium arsenide films have been deposited by the ArF laser-induced MOCVD over a wide range of process parameters. Device quality homoepitaxial GaAs films with specular mirror smooth surface have been obtained in the substrate temperature range of 425-500 C. Keywords Excimer laser, Laser induced, Epitaxial growth, Doping concentration, Mobility, Gallium arsenides.
APPROVED FOR PUBLIC RELEASE