Accession Number:

ADA183912

Title:

Laser Induced Chemical Vapor Deposition of Gallium Arsenide Films.

Descriptive Note:

Annual rept. no. 1, Aug 86-Jul 87,

Corporate Author:

SOUTHERN METHODIST UNIV DALLAS TEX DEPT OF ELECTRICAL ENGINEERING

Personal Author(s):

• Chu,Shirley S.
• Chu,Ting L.

Report Date:

1987-08-20

Pagination or Media Count:

60.0

Abstract:

The objective of this project is to investigate the epitaxial growth of device quality III-V semiconductor films by the free electron laser-induced epitaxial growth technique at low temperatures. Major efforts have been directed to 1 the design and construction of a low pressure reaction chamber and control system, and 2 the laser induced deposition and characterization of epitaxial gallium aresenide films by computer controlled MOCVD. Gallium arsenide films have been deposited by the ArF laser-induced MOCVD over a wide range of process parameters. Device quality homoepitaxial GaAs films with specular mirror smooth surface have been obtained in the substrate temperature range of 425-500 C. Keywords Excimer laser, Laser induced, Epitaxial growth, Doping concentration, Mobility, Gallium arsenides.

Descriptors:

• *EPITAXIAL GROWTH
• *FILMS
• *GALLIUM ARSENIDES
• CHAMBERS
• COMPUTERS
• CONCENTRATION(CHEMISTRY)
• CONTROL SYSTEMS
• DEPOSITION
• DOPING
• EXCIMERS
• GROUP III COMPOUNDS
• GROUP V COMPOUNDS
• LASERS
• LOW PRESSURE
• LOW TEMPERATURE
• MIRRORS
• QUALITY
• RANGE(EXTREMES)
• SEMICONDUCTING FILMS
• SPECULAR REFLECTION
• SUBSTRATES
• SURFACES
• TEMPERATURE

Subject Categories:

• Inorganic Chemistry
• Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE