DID YOU KNOW? DTIC has over 3.5 million final reports on DoD funded research, development, test, and evaluation activities available to our registered users. Click
HERE to register or log in.
Accession Number:
ADA183839
Title:
Chemical Reactions at the in vacuo Au/InP Interface.
Descriptive Note:
Technical rept. no. 5, Oct 86-Aug 87,
Corporate Author:
CALIFORNIA UNIV LOS ANGELES
Report Date:
1987-07-25
Pagination or Media Count:
9.0
Abstract:
The reaction between a gold film and an indium phosphide substrate occurs much more readily in vacuo than under an atmosphere pressure of an inert gas. At high pressures, the compounds Au2P3 and the Y intermetallic compound at times designated Au7In3, Au9In4, or Au2In are formed at 450 C and remain fairly stable even when annealed at 500 C for hours. Under ultra-high vacuum conditions, phosphorus readily escapes from the film when a sample is annealed at 300 C for 15 minutes, and the major reaction products are the psi phase Au3In2 and an unidentified Au-InP behaves more like a closed thermodynamic system under pressure than in a vacuum. Keywords Phosphorus escape, Composition shift, Layered islands, Four solid phases, Ternary phase diagram, Intense reflections.
Distribution Statement:
APPROVED FOR PUBLIC RELEASE