Accession Number:
ADA183839
Title:
Chemical Reactions at the in vacuo Au/InP Interface.
Descriptive Note:
Technical rept. no. 5, Oct 86-Aug 87,
Corporate Author:
CALIFORNIA UNIV LOS ANGELES
Personal Author(s):
Report Date:
1987-07-25
Pagination or Media Count:
9.0
Abstract:
The reaction between a gold film and an indium phosphide substrate occurs much more readily in vacuo than under an atmosphere pressure of an inert gas. At high pressures, the compounds Au2P3 and the Y intermetallic compound at times designated Au7In3, Au9In4, or Au2In are formed at 450 C and remain fairly stable even when annealed at 500 C for hours. Under ultra-high vacuum conditions, phosphorus readily escapes from the film when a sample is annealed at 300 C for 15 minutes, and the major reaction products are the psi phase Au3In2 and an unidentified Au-InP behaves more like a closed thermodynamic system under pressure than in a vacuum. Keywords Phosphorus escape, Composition shift, Layered islands, Four solid phases, Ternary phase diagram, Intense reflections.
Descriptors:
Subject Categories:
- Physical Chemistry