Accession Number:

ADA183433

Title:

Study and Development Effort on Opposed Gate-Source GaAs Devices

Descriptive Note:

Final rept. Sep 1983-Jun 1986

Corporate Author:

CORNELL UNIV ITHACA NY SCHOOL OF ELECTRICAL ENGINEERING

Report Date:

1987-05-01

Pagination or Media Count:

195.0

Abstract:

This document describes research on the Opposed Gate-Source Transistor OGST for the millimeter wave regime. Progress described concerns the development of self aligned lithography processes for fabricating a source contact opposite the gate electrode on a 200 nm GaAs membrane, the processing an ohmic source contact, the fabrication of a Schottky gate contact compatible with the high temperature processing of the source contact, and the electrical characterization of the transistors. Keywords Communications, Monolithic arrays, Millimeter waves, Surveillance, Opposed gate-source transistors.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE