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Study and Development Effort on Opposed Gate-Source GaAs Devices
Final rept. Sep 1983-Jun 1986
CORNELL UNIV ITHACA NY SCHOOL OF ELECTRICAL ENGINEERING
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This document describes research on the Opposed Gate-Source Transistor OGST for the millimeter wave regime. Progress described concerns the development of self aligned lithography processes for fabricating a source contact opposite the gate electrode on a 200 nm GaAs membrane, the processing an ohmic source contact, the fabrication of a Schottky gate contact compatible with the high temperature processing of the source contact, and the electrical characterization of the transistors. Keywords Communications, Monolithic arrays, Millimeter waves, Surveillance, Opposed gate-source transistors.
APPROVED FOR PUBLIC RELEASE