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Electron Irradiation Effects on the Shunt Resistance of Silicon Solar Cells.
Technical rept. 1 Aug 86-31 Jul 87,
STATE UNIV OF NEW YORK AT BUFFALO DEPT OF ELECTRICAL AND COMPUTER ENGINEERING
Pagination or Media Count:
Shunt resistance Rsh values greater than 5 X 10 to the 6th power ohms have been measured for high efficiency silicon solar cells fabircated by a low temperature diffusion technique, whereas lower values 0.5-.0x100,000ohms were obtained for ion-implanted solar cells. A degradation in Rsh values by an order of magnitude was observed after electron irradiations of 1 MeV to a fluence of 1 X 10th to the 16th power e-per sq. cm. Temperature dependence studies indicated a rapid decrease in Rsh above a threshold temperature which is sensitive to the device quality. As the fluence of irradiation increased, very little shift in the threshold temperature towards lower values was observed. The degradation in Rsh causes an enhancement in the dark saturation current which is partly responsible for degradation in the open-circuit voltage of the devices.
APPROVED FOR PUBLIC RELEASE