Accession Number:

ADA183320

Title:

Phonon Shifts and Strains in Strain-Layered (Ga1-xInx)As.

Descriptive Note:

Technical rept. 1 Aug 86-31 Jul 87,

Corporate Author:

STATE UNIV OF NEW YORK AT BUFFALO DEPT OF ELECTRICAL AND COMPUTER ENGINEERING

Personal Author(s):

• Burns,Gerald
• Wie,Chu-Ryang
• Dacol,Frank H.
• Petit,G. D.
• Woodall,J. M.

Report Date:

1987-07-31

Pagination or Media Count:

11.0

Abstract:

The phonon frequencies Raman Technique and the strains X-ray rocking curve technique in Ga1-xInx As films is measured on GaAs 100 substrates. Films with various x-values and various thicknesses were studied. The films range from perfect epitaxial ones to those that have relaxed by different amounts. Using both of these measurements, all of the films gives internal agreement, which indicates that the Raman technique can be used for in situ monitoring of the growth process. Keywords Gallium Arsenides Gallium Indium Arsenide.

Descriptors:

• AGREEMENTS
• FREQUENCY
• GRAPHS
• *INDIUM COMPOUNDS
• *RAMAN SPECTRA
• *GALLIUM ARSENIDES
• *SEMICONDUCTING FILMS
• EPITAXIAL GROWTH
• INDIUM COMPOUNDS
• INTERNAL
• PHONONS
• RAMAN SPECTRA
• SHIFTING
• SUBSTRATES
• THICKNESS

Subject Categories:

• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE