DID YOU KNOW? DTIC has over 3.5 million final reports on DoD funded research, development, test, and evaluation activities available to our registered users. Click HERE
to register or log in.
Phonon Shifts and Strains in Strain-Layered (Ga1-xInx)As.
Technical rept. 1 Aug 86-31 Jul 87,
STATE UNIV OF NEW YORK AT BUFFALO DEPT OF ELECTRICAL AND COMPUTER ENGINEERING
Pagination or Media Count:
The phonon frequencies Raman Technique and the strains X-ray rocking curve technique in Ga1-xInx As films is measured on GaAs 100 substrates. Films with various x-values and various thicknesses were studied. The films range from perfect epitaxial ones to those that have relaxed by different amounts. Using both of these measurements, all of the films gives internal agreement, which indicates that the Raman technique can be used for in situ monitoring of the growth process. Keywords Gallium Arsenides Gallium Indium Arsenide.
APPROVED FOR PUBLIC RELEASE