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Accession Number:
ADA183158
Title:
A Workshop on 3-5 Semiconductor: Metal Interfacial Chemistry and Its Effect on Electrical Properties, November 3-5, 1986,
Descriptive Note:
Corporate Author:
STANFORD UNIV CA
Report Date:
1986-11-05
Pagination or Media Count:
659.0
Abstract:
This workshop discusses The Thermodynamics of Bulk Metal III-V Systems Related to Interfacial Chemistry Thermodynamic Considerations of Metal-GaAs Reactions plus TEM Results Chemistry of Ti GaAs Interfaces Questions Concerning Interfacial Chemistry, Equilibrium, and Electrical Properties The Chemistry and Morphology of MetalIII-V Semiconductor Interfaces Schottky Barriers on InP110 Comparison to GaAs110 Interface Stables Phases at Reactive MetalCompound Semiconductor Interfaces Thermally Stable Ohmic Contact to n- type GaAs Effects in Ohmic Contacts Non Alloyed Ohmic Contacts by Solid State Reactions Large Variations of GaAs Schottky Barrier Height by Interface Layers Effects on Schottky Barriers of Metal Substitution in Semiconductors III-V Interfaces Schottky Barriers vs. Heterojunctions A Comparison between Conventional and in-situ UHV Processing for GeGaAs and CoGaAs Structures Electrical Study of Schottky Barriers on Atomically Clean 3-5110 Surfaces A Comparison to the Results of Studies Using Surface Sensitive Techniques and Au-GaAs Ohmic Contacts The Structures of AuGaAs and A1GaAs Interfaces Refractory Silicide Contacts for Self-Aligned GaAs MESFETs Heterojunction Growth and Impurity Incorporation During Vapor Growth of Compound Semiconductors Reflection EXAFS Studies of Semiconductor-Metal Interfaces.
Distribution Statement:
APPROVED FOR PUBLIC RELEASE
