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Amphoteric Impurities in Gallium Arsenide.
Final rept. 1 Nov 82-31 Jul 86,
ILLINOIS UNIV AT URBANA ENGINEERING RESEARCH CENTER FOR COMPOUND SEMICONDUCTOR MICROELECTRONICS
Pagination or Media Count:
Gallium arsenide is already an important material for application in high frequency, low noise field effects transitors FETs and in optoelectronic devices, and future Gallium Arsenide GaAs high speed integrated circuits are expected to have a major impact on sophisticated high data rate electronic systems. In spite of the great effort that has been expended in developing high purity epitaxial and undoped semi insulating bulk material is has only recently been possible to identify the residual donors and acceptors present in high purity GaAs, and there are still several unanswered questions regarding these identifications. There was much speculation on the identification and source of the residual impurities in earlier work, but because of the lack of positive identification of the donor and acceptor species, and in some cases even the incorrect identification of the donor or acceptor species present, much of this early work is of little value.
APPROVED FOR PUBLIC RELEASE