Ultrafast Processes and Spectroscopy with Free Electron Lasers.
Annual rept. 1 Jun 86-31 May 87,
PRINCETON UNIV NJ DEPT OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCE
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Our goal is to demonstrate the power of FELs in standard picosecond and femtosecond spectroscopy by performing time-resolved reflectivity or transmission, and wave mixing experiments in semiconductors. Of special interest to us are the carrier relaxation and trapping times in amorphous semiconductors. We report progress on three fronts. First, we have established a permanent laboratory at Stanford University, where we have assembled the necessary equipment. Second, we have developed a novel method to measure accurately and over an extremely wide frequency range the duration and coherence properties of ultrashort laser pulses. This technique has been demonstrated and analyzed successfully at Princeton and appears ideally suited to the characterization of FELs. Third, results from our recent femtosecond optical spectroscopy studies of amorphous silicon have helped us refine our experimental goals in this program, which will be discussed. Keywords Free electron laser, time resolved, picosecond, femtosecond, spectroscopy amorphous, semiconductors.
- Electrooptical and Optoelectronic Devices