Avalanching in Single-Event-Upset Charge Collection in Semiconductor Diodes.
Final rept. Oct 85-Jun 86,
HARRY DIAMOND LABS ADELPHI MD
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The one-dimensional computer program DIODE has been used to calculate charge collection in single ionizing events in silicon and gallium arsenide diodes. Avalanche multiplication is calculated to occur above a threshold of 3 V in a silicon diode, in agreement with published measurements. Since avalanching may lead to burnout in very-large-integration semiconductors, it is a greater danger than the funneling effect of space charge. Carrier recombination is found to be important in gallium arsenide. Keywords Avalanche Single-event upset CHarge collection Semiconductor Silicon Gallium arsenide and Carrier recombination.
- Electrical and Electronic Equipment
- Solid State Physics