Accession Number:

ADA181452

Title:

Avalanching in Single-Event-Upset Charge Collection in Semiconductor Diodes.

Descriptive Note:

Final rept. Oct 85-Jun 86,

Corporate Author:

HARRY DIAMOND LABS ADELPHI MD

Personal Author(s):

Report Date:

1987-02-01

Pagination or Media Count:

24.0

Abstract:

The one-dimensional computer program DIODE has been used to calculate charge collection in single ionizing events in silicon and gallium arsenide diodes. Avalanche multiplication is calculated to occur above a threshold of 3 V in a silicon diode, in agreement with published measurements. Since avalanching may lead to burnout in very-large-integration semiconductors, it is a greater danger than the funneling effect of space charge. Carrier recombination is found to be important in gallium arsenide. Keywords Avalanche Single-event upset CHarge collection Semiconductor Silicon Gallium arsenide and Carrier recombination.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE