Thin-Film Optoelectronic Circuits Research Program.
Final technical rept. 1 Feb 85-31 Jan 87,
HONEYWELL INC BLOOMINGTON MN PHYSICAL SCIENCES CENTER
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The program objective has been to identify and investigate IC-compatible fabrication processes for thin-film optoelectronic circuits on GaAs. Single-mode channel waveguides of SiO2-ZnO-SiO2, SiO2-Al2O3-TaO2-SiO have been deposited on GaAs by ion-beam sputtering. Straight guides, curves, tapers, Y-branches, crossovers, and directional couplers have all been demonstrated. Novel concepts have been developed for integrated GaAs Schottky photodiodes and self-aligning fiber-to-waveguide couplers. An IC-compatible baseline fabrication process has been established and a photomask set has been completed for an optoelectronic circuit demonstration, including Mach-Zehnder interferometric modulators, delta-beta electro-optic switches, and integrated GaAs photodetectors. Keywords include Integrated Optics, Gallium Arsenide GaAs, Zinc Oxide ZnO, Electro-Optic Devices, and Thin-Film Waveguides.
- *OPTICAL WAVEGUIDES
- *OPTICAL CIRCUITS
- GALLIUM ARSENIDES
- INTEGRATED SYSTEMS
- SCHOTTKY BARRIER DEVICES
- ION BEAMS
- THIN FILMS
- ZINC OXIDES
- ALUMINUM OXIDES
- Electrooptical and Optoelectronic Devices