Gas Source MBE (Molecular Beam Epitaxy).
COLORADO STATE UNIV FORT COLLINS DEPT OF ELECTRICAL ENGINEERING
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The objective of the research supported by the grant to grow epitaxial III-V semiconductor films using gaseous source materials for molecular beam epitaxy MBE. The grant provides the critical equipment items needed to customize an existing commercial MBE system and allow growth of heteroepitaxial structures that can not be fabricated by other existing techniques.