Single Crystal Films of Semiconductors on Amorphous Substrates Via a Low Temperature Graphoepitaxy.
Annual technical rept. 1 Mar 86-28 Feb 87,
MASSACHUSETTS INST OF TECH CAMBRIDGE RESEARCH LAB OF ELECTRONICS
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The objective of this program is to carry out basic research on the phenomenon of surface-energy-driven secondary grain growth SEDSGG in thin films on amorphous and single crystal substrates. Means of enhancing grain boundary mobility, such as ion bombardment, doping, and rapid thermal annealing are investigated, Theoretical models for SEDSGG are developed. The role of surface patterning in SEDSGG is also studied.
- Electrical and Electronic Equipment