Vibrational, Mechanical, and Thermal Properties of III-V Semiconductors.
Annual technical rept. 15 Aug 85-14 Aug 86,
NOTRE DAME UNIV IN DEPT OF PHYSICS
Pagination or Media Count:
We have pursued three major lines of investigation this year 1 development of theoretical methods for prediction the relaxation of atoms at III-V surfaces, 2 prediction of the vibrational spectra of random III0V and Hg1-xCdxTe alloys, and 3 development of a theory of Raman scattering in correlated and clustered alloys. Among other predictions, we have shown that 1 The reconstruction of 110 zincblende surfaces is inhibited by ionic forces, and so the 29 deg surface anion relaxation angle of GaAs, which was thought to be common to all zincblende 110 surfaces, decreases significantly with increasing ionicity of the semiconductor. 2 Wurtzite 1010 surfaces, to a reasonable approximation, do not reconstruct. 3 The clustering mode observed in Hg1-xCdxTe Raman spectra is due to Te atoms surrounded by three Hg atoms and one Dc atom, not to vacancy complexes. 4 The effects of correlations and clustering in the Raman spectra of alloys can be easily predicted using a theory which combines Ising-Monte Carlo techniques and the recursion method. Author
- Electrical and Electronic Equipment