Numerical Simulation of the Permeable Base Transistor.
Final rept. 1 Sep 84-31 Dec 86,
SCIENTIFIC RESEARCH ASSOCIATES INC GLASTONBURY CT
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This document describes the results of an SBIR Phase II program to investigate, through numerical simulation, the operational physics of the gallium arsenide permeable base transistor. Two distinct algorithms were used in the study the semiconductor drift and diffusion equation algorithm and the moments of the Boltzmann transport equation algorithm. The results of the study show that one-micron feature size PBTs are capable of a cutoff frequencies in excess of 120 GHz, b fmax values in the vicinity of 200 GHz, and c breakdown voltages in excess of 17 volts. The study also demonstrates that the design of the PBT is compatible with hydrodynamic flow concepts, which suggest means to significantly reduce the capacitance of the PBT.
- Electrical and Electronic Equipment
- Solid State Physics
- Numerical Mathematics