III-V Heterojunction Structures and High Speed Devices.
Annual rept. 1 Feb 86-31 Jan 87,
ILLINOIS UNIV AT URBANA COORDINATED SCIENCE LAB
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Much better p-GaAsn-Si heterojunction has been obtained. This led to new experimental and theoretical studies of these diodes and progress has been made in the understanding of the electrical properties of the GaAsSi interface. The study about dislocation reduction by annealing has been continued in connection with N. Otsuka from Purdue University. Interesting features has been revealed by TEM plan view made such as the creation of a clearly observable misfit dislocation network after annealing.
- Solid State Physics