Accession Number:

ADA181109

Title:

Silicon Oxynitride Stability

Descriptive Note:

Final rept. Aug 1984-Jun 1986

Corporate Author:

WESTINGHOUSE DEFENSE AND ELECTRONICS CENTER BALTIMORE MD ADVANCED TECHNOLOGY DIV

Report Date:

1987-02-01

Pagination or Media Count:

56.0

Abstract:

The objective of the program was to study the stability and failure mechanism of oxynitride dielectric film of 5 to 30 nanometer thickness under various stresses of interest. Initially, a survey of the literature was carried out on a silicon oxynitride thin films, their physical characteristics and important parameters affecting stability or electrical properties. Two types of silicon oxynitride test structures were fabricated. The first type consisted of various size aluminum dot capacitors. The second type provided insulated gate filed effect transistor with a series of different channel lengths and a group of test capacitors with polysilicon electrodes. Electrical tests on the capacitor structures included ramp voltage breakdown measurements, C-V measurements, observation of tunneling current and stability of the oxynitride to passing of current. Characterization curves were taking on some of the sample sample transistor with silicon oxynitride gate dielectric. It was concluded from the study that the intrinsic breakdown strength of the nitrided silicon dioxide was about 10 percent greater than that of the thin gate oxide prior to nitridation.

Subject Categories:

  • Inorganic Chemistry

Distribution Statement:

APPROVED FOR PUBLIC RELEASE