Accession Number:

ADA180234

Title:

DLTS Analysis and Modeling of Electron and Proton Irradiated (AlGa)As/GaAs Multijunction Solar Cells.

Descriptive Note:

Final rept. Oct 85-Oct 86,

Corporate Author:

FLORIDA UNIV GAINESVILLE DEPT OF ELECTRICAL ENGINEERING

Personal Author(s):

Report Date:

1987-03-01

Pagination or Media Count:

44.0

Abstract:

A numerical model has been developed to calculate the displacement defects, the damage constant of minority carrier diffusion length and the degradation of short circuit current I sub sc, open circuit voltage V sub oc and conversion efficiency eta sub c in the 1 MeV electron and proton irradiated AlGaAsGaAsInGaAs multijunction junction solar cell under normal incidence conditions. The results show good agreement between our calculated values and the experimental data of I sub sc, V sub oc and eta sub c. In addition, DLTS analysis of defects in AlGaAs p-n junction solar cells irradiated by 1-MeV electrons has also been carried out in this work. The I-V analysis on several MOCVD-grown GeGaAs tunnel junction diodes has also been made in this study. Keywords Gallium Arsenide, Aluminum Gallium Arsenide Idium Gallium Arsenide Deep Level Transient Spectroscopy Germanium Radiation Defects Multijunction Solar Cells Tunnel Junctions.

Subject Categories:

  • Inorganic Chemistry
  • Electric Power Production and Distribution

Distribution Statement:

APPROVED FOR PUBLIC RELEASE