Electrical Characterization of VLSI RAMs and PROMs.
Final rept. Mar 84-Jun 86,
GTE COMMUNICATIONS SYSTEMS CORP PHOENIX AZ
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Extensive electrical characterizations were performed on 256K bit and 512K bit ultra violet erasable PROMs UVEPROMs, 64K bit electrically erasable PROMs EEPROMs, 64K static RAMs organized as 8Kx8 bits, 256K dynamic RAMs CMOS and 32R16 PAL devices available from the merchant semiconductor industry. Based on the data obtained from the devices, parameter limits were established and proposed for the draft MIL-M-38510XXX specifications. The data, proposed limits and test methodologies and the related discussions are presented. Keywords Memory devices Random access memories Monolithic structures Semiconductors Complementary metal oxide semiconductors.
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