Accession Number:

ADA180039

Title:

Enhanced Internal Photoemission Study.

Descriptive Note:

Final rept. Jan 84-Feb 86,

Corporate Author:

WESTINGHOUSE DEFENSE AND ELECTRONICS CENTER BALTIMORE MD ADVANCED TECHNOLOGY DIV

Report Date:

1986-10-01

Pagination or Media Count:

88.0

Abstract:

Both theoretical modeling and physical and electrical characterization of PtSi Schottky gate infrared sensors are reported. A photoemission model for infrared photo-response of thin film PtSi Schottky devices has been developed including diffuse photo-electron scattering at the metalsemiconductor interface, film thickness, grain size and defect density effects. Cross sections and planar TEM work on bout 80A PtSi revealed epitaxial growth of PiSi with three variants, smooth er metalsemiconductor interface, slightly larger gains 200A to 500A and a more interconnected grain structure for PtSi formed 111 Si as opposed to 100 Si. PtSi films on both substrate orientations are continuous and have thickness variations 15 of the film thickness. TEM work 20A PtSi on 111 Si still shows good coverage epitaxial films with the PtSi pseudohexagonal cell being partially constrained to fit the hexagonal Si cell. These films were formed in vacuum with an anneal of 400 C to 650 C. lr response measurements revealed no improvement upon changing the substrate orientation from 100 Si 111 Si for PtSi films of similar thicknesses. The best C values were obtained on films formed on the 111 Si with values of about 19eV and a barrier value of 0.225 eV and a barrier value of 0.225 eV for 10A PtSi films. 80A PtSi films formed on both substrate orientations showed curvature on Folwer plots near the barrier value. When the film thickness decreases, this curvature disappeared and was accompanied by shifts in the extrapolated optical barrier as much as about .1eV.

Subject Categories:

  • Infrared Detection and Detectors

Distribution Statement:

APPROVED FOR PUBLIC RELEASE