Theory of Below-Band-Gap Photoluminescence in a Gallium Arsenide Doping Superlattice.
Progress rept. May-Oct 86
HARRY DIAMOND LABS ADELPHI MD
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This report presents a simplified calculation of the photoluminescence spectrum of a gallium arsenide doping superlattice. The electronic states in the conduction band of the superlattice are taken to be harmonic oscillator-like in the doping direction and free particle-like in the transverse directions. Localized acceptor states above the valence band are represented by spherically symmetric hydrogenic functions. Analytic expressions for the electric dipole matrix element between these states are obtained and are employed in the numerical evaluation of the spectrum for different electronhole distribution functions. Keywords Doping, superlattice, photoluminescence, gallium arsenides.
- Solid State Physics