Basic Studies of Gases for Fast Switches.
Annual summary rept. 1 Oct 85-30 Nov 86,
OAK RIDGE NATIONAL LAB TN
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This annual report contains a summary of the progress that we have made during the past year on the identifications and optimization of fast gas mixtures for use in diffuse-discharge switches. Several papers describing our measurements of the key transport parameters and breakdown strength characteristics of gas mixtures which we have suggested for use in practical switching devices have been published or have been submitted for publication during the past year. During the present contractual period, we have performed measurements of the basic transport and rate coefficients I.E., THE ELECTRON DRIFT VELOCITY, W, THE ELECTRON ATTACHMENT AND IONIZATION COEFFICIENT, ETAN and alphaN, respectively, the gas ionizing W values, and the high voltage breakdown field strengths ENiota im of gas mixtures potential practical interest as well as studied the behavior of these gas mixtures under more severe environmental conditions which are likely to occur in practical applications. In this connection, we have continued our studies of w, etaN, alphaN, and k sub a the electron attachment rate constant as a function of gas temperature T and have initiated a new project to study the effect of gas temperature on the EN iota im of selected gas mixtures.
- Electrical and Electronic Equipment
- Plasma Physics and Magnetohydrodynamics