Proceedings of the Annual Conference on The Physics and Chemistry of Semiconductor Interfaces (13th) held in Pasadena, California on 28 - 30 January 1986,
AMERICAN INST OF PHYSICS NEW YORK
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In this volume, we have the collection of papers that comprises the Proceedings of the 13th Annual Conference on the Physics and Chemistry of Semiconductor Interfaces held from January 28 through January 30, 1986 at the Pasadena convention Center and the Holiday Inn in Pasadena, California. Attendance was approximately the same as last year with about 150 participating in this years meeting. As in previous years, the greatest emphasis was placed on interfaces in compound semiconductors, and this year there was a large increase in papers concerned with the basic physics and chemistry of growth. To maintain the workshop atmosphere of the conference this year, the total number of papers was kept constant so that a great deal of discussion time would be available for each of the papers. In addition, invited talks were fewer than in recent years and were chosen to highlight topics that the committee felt would report on problems at the leading edge of developments in the field. The specific topics sessions that were covered by the invited and contributed papers included 1 Growth, 2 Metal-Semiconductor Interfaces, 3 Semiconductor-Semiconductor Interfaces, 4 Band Offsets, 5 Vacuum-Semiconductor Interfaces, and 6 Semiconductor-Insulator Interfaces. This year the session on growth and the discussion of the state of our knowledge of band offsets seemed particularly papers with less than two-fifths of this latter category being presented orally. The oral papers were selected not only on the basis of scientific merit, but also for addressing the more timely controversial topics.
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