Clustering and Ordering in III-V Alloys.
Final rept. 1 Jun 82-31 Dec 86,
WASHINGTON UNIV ST LOUIS MO SEMICONDUCTOR RESEARCH LAB
Pagination or Media Count:
ZnSnP2 is a potentially useful semiconductor which can have either the sphalerite structure or the chalcopyrite structure with no tetragonal distortion c2a. We have grown ZnSnP2 on various orientations of GaAs by liquid phase epitaxy and found that the best growth occurs on 110 surfaces. Double-crystal x-ray diffraction measurements indicate that these 110 layers have a lattice constant of 5.6507A, while 111 As layers grown under identical conditions have a lattice constant of 5.6532A, which matches GaAs to within or - .0002A. Keywords Heterojunctions, Interfacial energy gaps, Alloy formation, Ling range ordering, Primitive layered structures, Aluminum gallium arsenides, Zinc compounds, Tin compounds, Phosphorus compounds.
- Metallurgy and Metallography