Quaternary Narrow-Band Semiconductors (HgTe)x(InSb)1-X for Far-Infrared Detectors.
SAN DIEGO STATE UNIV FOUNDATION CA
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This report includes a description of results from work on an investigation of the quarternary system HgTe x InSb 1-x. The program of the reported year of work was, first of all, directed toward improvement of the crystal growth process with the purpose of preparation of the crystals suitable for use in the models infrared detectors on the basis of the HgTe x InSb 1-x alloys IMAT alloys. The second and main part of the program was manufacturing of the models of the IR detectors and their characterization. It was shown that the curvature of the crystallization front in the Bridgman process could be controlled two ways, namely, by i a proper choice of the ratio of total length of the growing crystal to its diameter, and ii a controllable proportion between the radiative thermal flux and the thermal conductance flux along the axis of the ingot.
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